| PART |
Description |
Maker |
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| M13S2561616A1 M13S2561616A-5BIG M13S2561616A-5TIG |
4M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Mem...
Elite Semiconductor Memory Technology Inc.
http://
|
| M13S256328A |
2M x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M13S128168A-4BG M13S128168A-4TG M13S128168A08 |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M13S128168A-5TG |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Elite Semiconductor Memory Technology, Inc.
|
| HY5DU281622 HY5DU281622LT-L HY5DU281622LT-H |
4 Banks x 2M x 16Bit Double Data Rate SDRAM
|
Hyundai
|
| KM432D2131 |
512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM
|
Samsung Semiconductor
|
| MSM27C3255CZ |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| MSM27C1655CZ |
524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM 524,288 -双字× 32位或1048576字16 -双字× 32位或8字16位页面模式一次性可编程
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
